| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,230 pcs
|
4230 pcs | On Request | 1 | On Request | On Request | 07+09 | On Request | On Request |
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| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTHD4102PT3G from ON Semiconductor is a dual P-channel MOSFET designed for battery and load management in portable equipment. It offers a 20V drain-to-source breakdown voltage and a continuous drain current of 2.9A at 25°C. The MOSFET exhibits a low on-resistance of 80mOhm at 2.9A and 4.5V gate-source voltage, with a gate charge of 8.6nC.
This device operates at standard logic level gate drive, simplifying circuit design. Its low profile (<1.1 mm) and miniature ChipFET package, which is 40% smaller than TSOP-6, make it suitable for extremely thin environments such as MP3 players, cell phones, and PDAs. The operating junction and storage temperature range is -55°C to 150°C.
Key electrical characteristics include an input capacitance of 750pF at 16V and a gate threshold voltage of 1.5V at 250µA. The power dissipation is rated at 1.1W under steady-state conditions at 25°C. The MOSFET is surface-mounted and comes in an 8-SMD, Flat Lead package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTHD4102PT3G is -20 V.
The continuous drain current (Id) for the NTHD4102PT3G is -2.9 A at 25°C.
The Rds On (Max) for the NTHD4102PT3G is 80 mOhm at a drain current of 2.9A and gate-source voltage of 4.5V.
The operating temperature range for the NTHD4102PT3G is -55°C to 150°C (TJ).
The NTHD4102PT3G is supplied in an 8-SMD, Flat Lead ChipFET™ package.