NTHD4102PT1G The On Semiconductor NTHD4102PT1G is a Dual P-Channel MOSFET designed for battery and load management in portable electronics. It features a 20V drain-source voltage and a 2.9A continuous current rating.
Mfr Part #:

NTHD4102PT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTHD4102PT1G is a Dual P-Channel MOSFET designed for battery and load management in portable electronics. It features a 20V drain-source voltage and a 2.9A continuous current rating.
✓ Total Stock: 78,061 pcs
$ Price Range: $0.99

NTHD4102PT1G Available from 5 distributors

✓ Authorised
✓ Non-Authorised

NTHD4102PT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NTHD4102PT1G Description

Short technical summary and product information.

The NTHD4102PT1G from On Semiconductor is a Dual P-Channel MOSFET housed in a miniature ChipFET™ package. This device offers an ultra-low RDS(ON) solution, making it suitable for battery and load management applications in portable equipment such as MP3 players, cell phones, and PDAs. It is also optimized for charge control in battery chargers and for buck and boost converters.

 

Key electrical characteristics include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.9A at 25°C. The on-resistance (Rds On) is a maximum of 80mOhm at 2.9A and 4.5V gate-source voltage. The MOSFET operates at standard logic-level gate drive, simplifying circuit design. Its low profile, less than 1.1 mm, allows for easy integration into thin portable devices.

 

The device operates within a temperature range of -55°C to 150°C (TJ). The ChipFET™ package is 40% smaller than a TSOP-6, offering a reduced footprint. This MOSFET is available in a Pb-Free package.

NTHD4102PT1G Quick Information

Product Type: MOSFET
Canonical Name: NTHD4102PT1G Dual P-Channel MOSFET
Subcategory: Dual P-Channel

NTHD4102PT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTHD4102PT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHD4102PT1G Features

  • Dual P-Channel MOSFET configuration.
  • 20V drain-to-source voltage rating.
  • 2.9A continuous drain current.
  • Low 80mOhm on-resistance.
  • Compact ChipFET™ package.

NTHD4102PT1G Applications

  • Optimized for portable equipment.
  • Used in battery management.
  • Suitable for load switching.
  • Applied in battery chargers.
  • Used in buck and boost converters.

NTHD4102PT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTHD4102PT1G?

The maximum drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current of the NTHD4102PT1G?

The continuous drain current is 2.9A at 25°C.

What is the typical on-resistance for the NTHD4102PT1G?

The Rds On is a maximum of 80mOhm at 2.9A and 4.5V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What type of package does the NTHD4102PT1G use?

It uses the ChipFET™ package, which is an 8-SMD, Flat Lead configuration.

Is the NTHD4102PT1G RoHS compliant?

Yes, it is RoHS3 Compliant.

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