| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,923 pcs
|
4923 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTHD3133PFT1G from On Semiconductor is a P-Channel MOSFET designed for power management applications. It offers a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3.2A at 25°C junction temperature. This device integrates a Schottky barrier diode, providing ultra-low forward voltage.
The MOSFET utilizes Trench P-Channel technology for low on-resistance, with a maximum Rds(on) of 80mOhm at 3.2A and 4.5V gate-source voltage. The integrated Schottky diode has a maximum forward current of 3.7A for short durations and a typical forward voltage of 0.35V.
Designed for surface mounting, the NTHD3133PFT1G comes in a compact ChipFET package, which is 40% smaller than a TSOP-6 package and offers excellent thermal characteristics. The operating temperature range is -55°C to 150°C (TJ).
Key applications include Li-Ion battery charging, high-side DC-DC conversion circuits, and high-side drive for small brushless DC motors. The independent pinout for each device simplifies circuit design.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTHD3133PFT1G is 20V.
The continuous drain current (Id) is 3.2A at a junction temperature of 25°C.
The maximum on-resistance (Rds On) is 80mOhm at a drain current of 3.2A and gate-source voltage of 4.5V.
The operating junction and storage temperature range is -55°C to 150°C.
The NTHD3133PFT1G is supplied in a ChipFET package.
Yes, it features an integrated Schottky barrier diode.