| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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69,845 pcs
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69845 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,667 pcs
|
3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
276 pcs
|
276 pcs | On Request | 1 | On Request | On Request | 1618 | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The ON Semiconductor NTHD3102CT1G is a complementary MOSFET featuring both N-channel and P-channel transistors in a single package. This device is designed for power management applications, offering a drain-to-source voltage of 20V. The N-channel MOSFET can handle a continuous drain current of 4A at 25°C, while the P-channel MOSFET supports 3.1A under the same conditions.
Utilizing leading-edge trench technology, the NTHD3102CT1G provides low on-resistance, with typical values of 45mOhm at 4.4A/4.5V for the N-channel and P-channel devices respectively. It also features a logic-level gate for easier interface with microcontrollers. The device operates over a wide temperature range of -55°C to 150°C.
Packaged in a compact ChipFET™ (8-SMD, Flat Lead) surface-mount package, this MOSFET is ideal for space-constrained portable and battery-powered products. Its small size and leadless design offer excellent thermal characteristics. Applications include DC-DC conversion circuits, load/power switching, and power management in single or dual cell Li-ion battery supplied devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTHD3102CT1G is 20V.
The NTHD3102CT1G has a continuous drain current rating of 4A for the N-channel and 3.1A for the P-channel at 25°C steady state.
The typical on-resistance (Rds On) for the NTHD3102CT1G is 45mOhm at 4.4A/4.5V.
The operating temperature range for the NTHD3102CT1G is -55°C to 150°C.
The NTHD3102CT1G is in an 8-SMD, Flat Lead ChipFET™ package.
Yes, the NTHD3102CT1G is RoHS3 Compliant.