NTHD3101FT1G The On Semiconductor NTHD3101FT1G is a P-Channel MOSFET with an integrated Schottky Diode. It offers a 20V drain-source voltage and 3.2A continuous drain current.
Mfr Part #:

NTHD3101FT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTHD3101FT1G is a P-Channel MOSFET with an integrated Schottky Diode. It offers a 20V drain-source voltage and 3.2A continuous drain current.
✓ Total Stock: 65,508 pcs
$ Price Range: $0.99

NTHD3101FT1G Available from 4 distributors

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807 pcs
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NTHD3101FT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Style
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTHD3101FT1G Description

Short technical summary and product information.

The NTHD3101FT1G from On Semiconductor is a P-Channel MOSFET designed for power management applications. It features an integrated Schottky Diode, providing ultra-low VF for efficient operation.

 

Key electrical specifications include a 20V drain-to-source voltage (VDSS) and a continuous drain current of 3.2A at Tj=25°C. The MOSFET exhibits low on-resistance, with a typical value of 80mOhm at 3.2A and 4.5V Vgs. It operates within a temperature range of -55°C to 150°C.

 

This component is housed in a compact ChipFET™ package, which offers excellent thermal characteristics and is 40% smaller than a TSOP-6 package. The leadless SMD design facilitates easier circuit design with independent pinouts for each device. It is suitable for applications such as Li-Ion battery charging, high-side DC-DC conversion, and driving small brushless DC motors in portable, battery-powered products.

 

The NTHD3101FT1G is RoHS3 compliant and has an MSL rating of 1.

NTHD3101FT1G Quick Information

Product Type: MOSFET
Series: NTHD3101FT1G
Canonical Name: NTHD3101FT1G P-Channel MOSFET with Schottky Diode
Subcategory: Power MOSFETs

NTHD3101FT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTHD3101FT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHD3101FT1G Features

  • P-Channel MOSFET with Schottky Diode.
  • 20V Drain-Source Voltage.
  • 3.2A Continuous Drain Current.
  • Low On-Resistance.
  • Compact ChipFET™ package.

NTHD3101FT1G Applications

  • Ideal for Li-Ion battery charging.
  • Used in high-side DC-DC conversion.
  • Suitable for small brushless DC motors.
  • Power management in portable devices.

NTHD3101FT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTHD3101FT1G?

The drain-to-source voltage (VDSS) for the NTHD3101FT1G is 20V.

What is the continuous drain current of the NTHD3101FT1G?

The continuous drain current is 3.2A at Tj=25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What type of MOSFET is the NTHD3101FT1G?

The NTHD3101FT1G is a P-Channel MOSFET.

Does the NTHD3101FT1G include a Schottky Diode?

Yes, the NTHD3101FT1G features an integrated Schottky Diode.

What is the package type for the NTHD3101FT1G?

The NTHD3101FT1G is supplied in a ChipFET™ package.

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