| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,953 pcs
|
7953 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,498 pcs
|
1498 pcs | On Request | 1 | On Request | On Request | 1632+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTHD3100CT1G from On Semiconductor is a complementary N-Channel and P-Channel MOSFET designed for power management applications. It offers a drain-to-source voltage of 20V and continuous drain currents of 2.9A for N-Channel and 3.2A for P-Channel at 25°C.
This MOSFET utilizes Trench P-Channel technology for low on-resistance and low gate charge N-Channel for test switching. It has an Rds(on) as low as 58 mOhm (typical) at 4.5V for the N-Channel and 64 mOhm (typical) at -4.5V for the P-Channel. The maximum power dissipation is 1.1W.
Packaged in a ChipFET™ SMD package, it provides great thermal characteristics and is ideal for DC-DC conversion circuits, load switch applications requiring level shift, and driving small brushless DC motors. The operating temperature range is -55°C to 150°C.
Key electrical characteristics include an input capacitance of 165pF (max) at 10V and a gate charge of 2.3nC (max) at 4.5V. The gate threshold voltage is a maximum of 1.2V at 250µA, indicating it is a logic-level gate device.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTHD3100CT1G is 20V.
The continuous drain current is 2.9A for the N-Channel and 3.2A for the P-Channel at 25°C.
The maximum power dissipation (Pd) is 1.1W at 25°C steady state.
The operating junction and storage temperature range is -55°C to 150°C.
The NTHD3100CT1G is supplied in a ChipFET™ SMD package.
The RoHS status is listed as RoHS3 Compliant.