NTHC5513T1G The ON Semiconductor NTHC5513T1G is a complementary N/P-Channel MOSFET designed for power management applications. It features a 20V drain-to-source voltage and a ChipFET package.
Mfr Part #:

NTHC5513T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTHC5513T1G is a complementary N/P-Channel MOSFET designed for power management applications. It features a 20V drain-to-source voltage and a ChipFET package.
✓ Total Stock: 84,593 pcs
$ Price Range: $0.99

NTHC5513T1G Available from 2 distributors

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✓ Non-Authorised
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Non-Authorised Inventory information
81,000 pcs
81000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,593 pcs
3593 pcs On Request 1 On Request On Request On Request On Request On Request

NTHC5513T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

NTHC5513T1G Description

Short technical summary and product information.

The ON Semiconductor NTHC5513T1G is a complementary N-Channel and P-Channel MOSFET in a ChipFET package. It is designed for power management applications in portable, battery-powered products, and load switch applications requiring level shift.

 

This MOSFET offers a drain-to-source voltage (Vdss) of 20V. The continuous drain current is rated at 2.9A for the N-channel and -2.2A for the P-channel at 25°C. Its Rds(on) is as low as 80mOhm at 2.9A, 4.5V for the N-channel and 130mOhm at -4.5V for the P-channel, contributing to high efficiency performance.

 

The ChipFET package provides excellent thermal characteristics and a low profile (<1.10 mm), making it suitable for extremely thin environments. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

 

Key electrical characteristics include a gate-to-source voltage of ±12V, a logic level gate, and an input capacitance of 180pF at 10V. The operating junction and storage temperature range is -55°C to 150°C.

NTHC5513T1G Quick Information

Product Type: MOSFET
Canonical Name: NTHC5513T1G Complementary ChipFET MOSFET
Subcategory: Complementary

NTHC5513T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NTHC5513T1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHC5513T1G Features

  • Complementary N-Channel and P-Channel MOSFET.
  • Low Rds(on) for high efficiency performance.
  • Low profile ChipFET package for thin environments.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
  • Logic Level Gate for versatile control.

NTHC5513T1G Applications

  • Load switch applications requiring level shift.
  • DC-DC conversion circuits.
  • Drive small brushless DC motors.
  • Power management in portable products.

NTHC5513T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTHC5513T1G MOSFET?

The drain-to-source voltage (Vdss) for the NTHC5513T1G is 20V.

What are the continuous drain current ratings for the NTHC5513T1G?

The continuous drain current is 2.9A for the N-channel and -2.2A for the P-channel at 25°C.

What is the Rds(on) of the NTHC5513T1G MOSFET?

The Rds(on) is 80mOhm at 2.9A, 4.5V for the N-channel and 130mOhm at -4.5V for the P-channel.

What is the operating temperature range for the NTHC5513T1G?

The operating junction and storage temperature range is -55°C to 150°C.

What type of package does the NTHC5513T1G use?

The NTHC5513T1G uses a ChipFET package.

Is the NTHC5513T1G RoHS compliant?

Yes, the NTHC5513T1G is RoHS3 Compliant.

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