| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
81,000 pcs
|
81000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,593 pcs
|
3593 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTHC5513T1G is a complementary N-Channel and P-Channel MOSFET in a ChipFET package. It is designed for power management applications in portable, battery-powered products, and load switch applications requiring level shift.
This MOSFET offers a drain-to-source voltage (Vdss) of 20V. The continuous drain current is rated at 2.9A for the N-channel and -2.2A for the P-channel at 25°C. Its Rds(on) is as low as 80mOhm at 2.9A, 4.5V for the N-channel and 130mOhm at -4.5V for the P-channel, contributing to high efficiency performance.
The ChipFET package provides excellent thermal characteristics and a low profile (<1.10 mm), making it suitable for extremely thin environments. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Key electrical characteristics include a gate-to-source voltage of ±12V, a logic level gate, and an input capacitance of 180pF at 10V. The operating junction and storage temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTHC5513T1G is 20V.
The continuous drain current is 2.9A for the N-channel and -2.2A for the P-channel at 25°C.
The Rds(on) is 80mOhm at 2.9A, 4.5V for the N-channel and 130mOhm at -4.5V for the P-channel.
The operating junction and storage temperature range is -55°C to 150°C.
The NTHC5513T1G uses a ChipFET package.
Yes, the NTHC5513T1G is RoHS3 Compliant.