| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,700 pcs
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2700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NTH4LN095N65S3H is a SUPERFET III FAST series N-Channel MOSFET. It utilizes charge balance technology for low on-resistance and reduced gate charge, enabling minimized conduction loss and superior switching performance.
Key electrical specifications include a maximum drain-source voltage (VDSS) of 650V and a continuous drain current of 30A at 25°C. The on-resistance (Rds(on)) is a maximum of 95mOhm at 15A and 10V gate drive, with a typical gate charge (Qg) of 58nC. The device also features a typical effective output capacitance (Coss(eff.)) of 522pF and 100% avalanche testing.
This MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 208W at 25°C. It is packaged in a TO-247-4LD through-hole package, suitable for various power system applications requiring miniaturization and higher efficiency.
Applications include Telecom/Server Power Supplies, Industrial Power Supplies, and UPS/Solar systems. The device is Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) for the NTH4LN095N65S3H is 650V.
The NTH4LN095N65S3H has a continuous current rating of 30A at 25°C.
The typical on-resistance (Rds(on)) is 77 mOhm.
The NTH4LN095N65S3H is supplied in a TO-247-4LD package.
The operating temperature range is -55°C to 150°C (TJ).
Yes, the NTH4LN095N65S3H is RoHS3 Compliant.