NTH4LN067N65S3H The On Semiconductor NTH4LN067N65S3H is an N-Channel MOSFET designed for high-efficiency power applications. It features a 650V drain-source voltage and a low on-resistance.
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NTH4LN067N65S3H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTH4LN067N65S3H is an N-Channel MOSFET designed for high-efficiency power applications. It features a 650V drain-source voltage and a low on-resistance.
✓ Total Stock: 318 pcs
$ Price Range: $0.99

NTH4LN067N65S3H Available from 1 distributor

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NTH4LN067N65S3H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Quantity
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTH4LN067N65S3H Description

Short technical summary and product information.

The NTH4LN067N65S3H from On Semiconductor is a SUPERFET III FAST series N-Channel MOSFET. It utilizes charge balance technology for low on-resistance and reduced gate charge, enabling minimized conduction loss and superior switching performance.

 

Key electrical specifications include a maximum drain-source voltage of 650V and a continuous drain current of 40A at 25°C case temperature. The Rds On is a maximum of 67mOhm at 20A and 10V gate-source voltage, with a typical value of 55mOhm. The gate charge (Qg) is typically 80nC, and the effective output capacitance (Coss(eff.)) is typically 691pF.

 

This MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 266W at 25°C. It is suitable for applications requiring high efficiency and miniaturization, such as telecom/server power supplies, industrial power supplies, and UPS/solar systems.

 

The device is housed in a TO-247-4LD package and is designed for through-hole mounting. It is RoHS compliant and meets MSL 1 standards.

NTH4LN067N65S3H Quick Information

Product Type: MOSFET
Series: FAST
Canonical Name: NTH4LN067N65S3H N-Channel MOSFET
Subcategory: N-Channel

NTH4LN067N65S3H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTH4LN067N65S3H Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTH4LN067N65S3H Features

  • 650V drain-source voltage rating.
  • Low on-resistance of 67mOhm max.
  • Typical gate charge of 80nC.
  • Suitable for high-efficiency power systems.
  • TO-247-4LD package for through-hole mounting.

NTH4LN067N65S3H Applications

  • Used in telecom power supplies.
  • Suitable for server power supplies.
  • Applied in industrial power supplies.
  • Incorporated into UPS systems.
  • Utilized in solar power applications.

NTH4LN067N65S3H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NTH4LN067N65S3H MOSFET?

The maximum drain-source voltage is 650 V.

What is the typical on-resistance of the NTH4LN067N65S3H MOSFET?

The typical on-resistance is 55 mOhm.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 40 A at a case temperature of 25°C.

What is the operating temperature range for the NTH4LN067N65S3H?

The operating temperature range is -55°C to 150°C.

What package type is the NTH4LN067N65S3H MOSFET supplied in?

It is supplied in a TO-247-4LD package.

Is the NTH4LN067N65S3H RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1 Unlimited.

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