| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,128 pcs
|
4128 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTH4L160N120SC1 from On Semiconductor is a high-performance Silicon Carbide (SiC) N-Channel MOSFET. It is rated for a maximum drain-to-source voltage (VDSS) of 1200V and can handle a continuous drain current (ID) of 17.3A at 25°C case temperature, with a maximum power dissipation of 111W. The MOSFET exhibits a low on-resistance (Rds(on)) of 224mOhm at 12A and 20V gate-source voltage, and a typical on-resistance of 160mOhm.
Key electrical characteristics include a gate charge (Qg) of 34 nC at 20V and an input capacitance (Ciss) of 665 pF at 800V. The device operates across a wide temperature range from -55°C to 175°C (TJ). It is designed for high-speed switching applications, featuring low capacitance.
Packaged in a TO-247-4L through-hole package, the NTH4L160N120SC1 is suitable for demanding applications such as Uninterruptible Power Supplies (UPS), DC-DC converters, and boost inverters. The device is RoHS 3 compliant and Halide Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDSS) is 1200 V.
The continuous drain current is 17.3 A at 25°C case temperature.
The maximum on-resistance (Rds On) is 224 mOhm at 12A drain current and 20V gate-source voltage.
The operating junction and storage temperature range is -55°C to 175°C.
The device is supplied in a TO-247-4L package.
Yes, the RoHS Status is RoHS3 Compliant.