| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,770 pcs
|
1770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,407 pcs
|
1407 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,070 pcs
|
1070 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTH4L080N120SC1 is a Silicon Carbide (SiC) MOSFET from On Semiconductor, designed to provide superior switching performance and reliability compared to traditional silicon devices. This N-channel MOSFET features a high breakdown voltage of 1200V and a maximum continuous drain current of 29A at 25°C case temperature.
Key electrical characteristics include a low on-state resistance (RDS(on)) of 110mOhm at 20A and 20V gate-source voltage, and a gate charge (Qg) of 56nC at 20V. The device operates within a wide temperature range of -55°C to +175°C.
Packaged in a TO-247-4L through-hole package, this SiC FET is suitable for demanding applications such as industrial motor drives, UPS systems, and PV chargers. Its advanced SiC technology contributes to higher efficiency, faster operation, increased power density, and reduced EMI in power electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 1200 V.
The continuous drain current is 29A at a case temperature of 25°C and 21A at 100°C.
The maximum Rds On is 110mOhm when tested at 20A drain current and 20V gate-source voltage.
The operating and storage junction temperature range is -55°C to +175°C.
This MOSFET is supplied in a TO-247-4L package.
Yes, this device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.