Mfr Part #:

NTH4L060N090SC1

The ON Semiconductor NTH4L060N090SC1 is a Silicon Carbide N-Channel MOSFET designed for high-performance applications. It features a 900V drain-to-source voltage and a low on-resistance.

✓ Total Stock: 1,527 pcs

$ Price Range: $0.99

NTH4L060N090SC1 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	1,077 pcs On Request	1077 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	450 pcs On Request	450 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NTH4L060N090SC1 Description

Short technical summary and product information.

The ON Semiconductor NTH4L060N090SC1 is a Silicon Carbide (SiC) N-Channel MOSFET. It offers a high drain-to-source breakdown voltage of 900V and a maximum continuous drain current of 46A at 25°C. The device boasts a low Rds On, with a maximum of 43mOhm at 20A and 18Vgs, and a typical value of 60mOhm at 15Vgs.

Key electrical characteristics include a gate threshold voltage of 4.3V (max) at 5mA, a gate charge (Qg) of 87nC (max) at 15V, and an input capacitance (Ciss) of 1770pF (max) at 450V. The operating temperature range is -55°C to 175°C.

This MOSFET is housed in a TO-247-4L package, suitable for through-hole mounting. It has a power dissipation of 221W (Tc) and a junction-to-case thermal resistance of 0.68°C/W. The device is RoHS3 compliant and Halide Free.

Typical applications for this SiC MOSFET include UPS systems, DC-DC converters, and boost inverters, where its high voltage and low resistance characteristics are beneficial.

NTH4L060N090SC1 Quick Information

Product Type: MOSFET

Canonical Name: On Semiconductor NTH4L060N090SC1 Silicon Carbide N-Channel MOSFET

Subcategory: N-Channel

NTH4L060N090SC1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NTH4L060N090SC1 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTH4L060N090SC1 Features

900V drain-to-source breakdown voltage.
Low Rds On: 43mOhm maximum.
High continuous drain current: 46A.
Silicon Carbide technology for efficiency.
TO-247-4L through-hole package.

NTH4L060N090SC1 Applications

Ideal for UPS systems.
Suitable for DC-DC converters.
Used in boost inverter designs.
High-voltage power applications.

NTH4L060N090SC1 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage for the NTH4L060N090SC1?

The maximum drain-to-source voltage (Vds) is 900 V.

What is the typical Rds On for the NTH4L060N090SC1 MOSFET?

The typical Rds On is 60 mOhm at 15Vgs and 43 mOhm at 18Vgs.

What is the maximum continuous drain current?

The maximum continuous drain current is 46A at 25°C.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

What package type is the NTH4L060N090SC1 MOSFET supplied in?

It is supplied in a TO-247-4L package for through-hole mounting.

Is the NTH4L060N090SC1 RoHS compliant?

Yes, it is RoHS3 Compliant.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	46 A (Tc)
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 15 V
Halogen Free	Halide Free
Input Capacitance (Ciss) (Max) @ Vds	1770 pF @ 450 V
Lead Spacing	4.0 mm
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	221 W (Tc)
Rds On (Max) @ Id, Vgs	43 mOhm
Storage Temperature	°C ~ °C
Supplier Device Package	TO-247-4L
Tape & Reel	No
Technology	SiC
Vgs (Max)	-8 V / +22 V
Vgs(th) (Max) @ Id	4.3 V @ 5mA