NTH4L045N065SC1 The ON Semiconductor NTH4L045N065SC1 is an N-Channel Silicon Carbide MOSFET designed for high-performance applications. It offers a 650V drain-source voltage and a low on-resistance.
Mfr Part #:

NTH4L045N065SC1

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTH4L045N065SC1 is an N-Channel Silicon Carbide MOSFET designed for high-performance applications. It offers a 650V drain-source voltage and a low on-resistance.
✓ Total Stock: 2,535 pcs
$ Price Range: $0.99

NTH4L045N065SC1 Available from 3 distributors

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NTH4L045N065SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTH4L045N065SC1 Description

Short technical summary and product information.

The NTH4L045N065SC1 is an N-Channel Silicon Carbide (SiC) MOSFET manufactured by ON Semiconductor. This device is designed for demanding power applications, featuring a high drain-source voltage rating of 650V.

 

Key electrical characteristics include a maximum drain-source on-resistance (Rds On) of 50mOhm at 25A and 18V Vgs, and a typical Rds On of 33mOhm at 18V Vgs. It supports a continuous drain current of 55A at 25°C case temperature and has a maximum power dissipation of 187W. The MOSFET boasts a low gate charge (Qg) of 105 nC and an output capacitance (Coss) of 162 pF, enabling high-speed switching.

 

Operating across a wide temperature range from -55°C to 175°C, the NTH4L045N065SC1 is suitable for various environments. It is packaged in a TO-247-4L through-hole package, facilitating integration into power circuits.

 

Typical applications for this SiC MOSFET include switching mode power supplies (SMPS), solar inverters, uninterruptible power supplies (UPS), and energy storage systems, where its advanced material properties offer significant advantages in efficiency and performance.

NTH4L045N065SC1 Quick Information

Product Type: MOSFET
Series: NTH4L045N065SC1
Canonical Name: On Semiconductor NTH4L045N065SC1 N-Channel Silicon Carbide MOSFET
Subcategory: N-Channel

NTH4L045N065SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NTH4L045N065SC1 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTH4L045N065SC1 Features

  • 650V drain-source breakdown voltage.
  • 50mOhm maximum drain-source on-resistance.
  • 55A continuous drain current rating.
  • 105nC typical gate charge.
  • TO-247-4L through-hole package.

NTH4L045N065SC1 Applications

  • Suitable for switching mode power supplies.
  • Ideal for solar inverter applications.
  • Used in uninterruptible power supplies.
  • Applicable for energy storage systems.

NTH4L045N065SC1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the NTH4L045N065SC1 MOSFET?

The drain-to-source voltage rating (Vds) for the NTH4L045N065SC1 is 650 V.

What is the maximum Rds On for the NTH4L045N065SC1 MOSFET?

The maximum Rds On is 50mOhm when tested at 25A drain current and 18V gate-source voltage.

What is the continuous drain current of the NTH4L045N065SC1 MOSFET?

The continuous drain current (Id) is 55A at a case temperature of 25°C.

What is the operating temperature range for the NTH4L045N065SC1 MOSFET?

The operating temperature range is -55°C to 175°C (TJ).

Is the NTH4L045N065SC1 MOSFET RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NTH4L045N065SC1 MOSFET?

The Moisture Sensitivity Level is 1 Unlimited.

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