NTH4L040N120SC1 The On Semiconductor NTH4L040N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET. It features a 1200V drain-to-source voltage and a maximum continuous drain current of 58A at 25°C.
Mfr Part #:

NTH4L040N120SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTH4L040N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET. It features a 1200V drain-to-source voltage and a maximum continuous drain current of 58A at 25°C.
✓ Total Stock: 6,750 pcs
$ Price Range: $0.99

NTH4L040N120SC1 Available from 1 distributor

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✓ Non-Authorised
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6,750 pcs
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NTH4L040N120SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTH4L040N120SC1 Description

Short technical summary and product information.

The NTH4L040N120SC1 from On Semiconductor is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for demanding applications. It offers a high drain-to-source voltage rating of 1200V and a low on-resistance of 56mOhm at 35A and 20V gate drive.

 

This MOSFET boasts an ultra-low gate charge of 106 nC and low output capacitance of 137 pF, enabling high-speed switching with reduced losses. The device operates over a wide temperature range from -55°C to 175°C and has a maximum power dissipation of 319W at 25°C case temperature.

 

Packaged in a TO-247-4L through-hole configuration, the NTH4L040N120SC1 is suitable for applications such as UPS, DC-DC converters, and boost inverters. It is also RoHS compliant and Halide-free.

 

Key electrical characteristics include a gate-to-source voltage range of -15V/+25V and a gate threshold voltage of 4.3V maximum at 10mA. The device is 100% avalanche tested, ensuring reliability under surge conditions.

NTH4L040N120SC1 Quick Information

Product Type: MOSFET
Canonical Name: NTH4L040N120SC1 Silicon Carbide MOSFET
Subcategory: N-Channel

NTH4L040N120SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NTH4L040N120SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTH4L040N120SC1 Features

  • 1200V drain-to-source voltage rating.
  • Low 56mOhm Rds(on) at 35A.
  • Ultra-low gate charge of 106 nC.
  • High-speed switching capability.
  • TO-247-4L through-hole package.

NTH4L040N120SC1 Applications

  • Suitable for UPS systems.
  • Used in DC-DC converters.
  • Ideal for boost inverters.
  • High-power switching applications.

NTH4L040N120SC1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTH4L040N120SC1?

The maximum drain-to-source voltage (VDSS) is 1200 V.

What is the typical on-resistance (Rds(on)) of this MOSFET?

The typical Rds(on) is 40 mOhm at 20V gate drive.

What is the operating temperature range for the NTH4L040N120SC1?

The operating junction temperature range is -55°C to 175°C.

What package type is the NTH4L040N120SC1 supplied in?

It is supplied in a TO-247-4L package.

Is the NTH4L040N120SC1 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

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