NTH4L028N170M1 The On Semiconductor NTH4L028N170M1 is a Silicon Carbide N-Channel MOSFET. It features a 1700V drain-to-source voltage and 28mOhm typical on-resistance.
Mfr Part #:

NTH4L028N170M1

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTH4L028N170M1 is a Silicon Carbide N-Channel MOSFET. It features a 1700V drain-to-source voltage and 28mOhm typical on-resistance.
✓ Total Stock: 11,293 pcs
$ Price Range: $0.99

NTH4L028N170M1 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,060 pcs
10060 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,233 pcs
1233 pcs On Request 1 On Request On Request On Request On Request On Request

NTH4L028N170M1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTH4L028N170M1 Description

Short technical summary and product information.

The On Semiconductor NTH4L028N170M1 is an N-Channel Silicon Carbide (SiC) MOSFET designed for high-performance applications. It boasts a maximum drain-to-source voltage (Vdss) of 1700V and a low typical on-resistance (Rds(on)) of 28 mOhm at 20V gate-source voltage. This device offers a continuous drain current of 81A at 25°C case temperature and a maximum power dissipation of 535W.

 

Key electrical characteristics include an ultra-low gate charge (Qg) of 200 nC and a low input capacitance (Ciss) of 4230 pF. The MOSFET is rated for a wide operating temperature range from -55°C to 175°C.

 

Packaged in a TO-247-4L through-hole configuration, the NTH4L028N170M1 is suitable for demanding applications such as UPS and DC-DC converters. It is Pb-free and RoHS compliant.

NTH4L028N170M1 Quick Information

Product Type: MOSFET
Series: M1
Canonical Name: NTH4L028N170M1 Silicon Carbide MOSFET
Subcategory: N-Channel

NTH4L028N170M1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTH4L028N170M1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTH4L028N170M1 Features

  • 1700V drain-to-source voltage rating.
  • Low 28mOhm typical on-resistance.
  • High 81A continuous drain current.
  • Ultra-low gate charge of 200nC.
  • TO-247-4L through-hole package.

NTH4L028N170M1 Applications

  • Used in high-voltage power supplies
  • Suitable for motor drive circuits
  • Ideal for industrial power switching
  • Supports high pulsed current applications

NTH4L028N170M1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTH4L028N170M1?

The maximum drain-to-source voltage (Vdss) is 1700 V.

What is the typical on-resistance of the NTH4L028N170M1?

The typical on-resistance (Rds(on)) is 28 mOhm at a gate-source voltage of 20 V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 81 A at a case temperature of 25°C.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NTH4L028N170M1 supplied in?

It is supplied in a TO-247-4L package.

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