Mfr Part #:

NTH4L025N065SC1

Name: NTH4L025N065SC1
Brand: On Semiconductor
SKU: NTH4L025N065SC1
Availability: InStock

Mfr Name: On Semiconductor

Description:

SILICON CARBIDE (SIC) MOSFET - 1

✓ Total Stock: 14,621 pcs

NTH4L025N065SC1 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	1,021 pcs On Request	1021 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	12,600 pcs On Request	12600 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

Short technical summary and product information.

SILICON CARBIDE (SIC) MOSFET - 1

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	99A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	3480 pF @ 15 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	348W (Tc)
Rds On (Max) @ Id, Vgs	28.5mOhm @ 45A, 18V
Supplier Device Package	TO-247-4L
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -8V
Vgs(th) (Max) @ Id	4.3V @ 15.5mA