NTH4L025N065SC1 The ON Semiconductor NTH4L025N065SC1 is a Silicon Carbide (SiC) N-Channel MOSFET. It offers a 650V drain-source voltage and a continuous drain current of 99A.
Mfr Part #:

NTH4L025N065SC1

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTH4L025N065SC1 is a Silicon Carbide (SiC) N-Channel MOSFET. It offers a 650V drain-source voltage and a continuous drain current of 99A.
✓ Total Stock: 14,621 pcs
$ Price Range: $0.99

NTH4L025N065SC1 Available from 3 distributors

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NTH4L025N065SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTH4L025N065SC1 Description

Short technical summary and product information.

The ON Semiconductor NTH4L025N065SC1 is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for demanding power applications. It features a drain-source voltage (Vdss) of 650V and a maximum continuous drain current of 99A at 25°C case temperature, with a power dissipation of 348W.

 

Key electrical characteristics include a low typical on-resistance (RDS(on)) of 19 mOhm at 18V Vgs, and 25 mOhm at 15V Vgs. The device also boasts an ultra-low total gate charge (Qg(tot)) of 164 nC and an output capacitance (Coss) of 278 pF. The operating temperature range is -55°C to 175°C (TJ).

 

This MOSFET is housed in a TO-247-4L package, suitable for through-hole mounting. Its SiC technology provides superior performance compared to traditional silicon MOSFETs, making it suitable for applications such as Switching Mode Power Supplies (SMPS), solar inverters, Uninterruptable Power Supplies (UPS), and energy storage systems.

NTH4L025N065SC1 Quick Information

Product Type: MOSFET
Series: NTH4L025N065SC1
Canonical Name: NTH4L025N065SC1 Silicon Carbide (SiC) N-Channel MOSFET
Subcategory: N-Channel

NTH4L025N065SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NTH4L025N065SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTH4L025N065SC1 Features

  • 650V drain-source voltage rating.
  • 99A continuous drain current.
  • Low 19mOhm typical Rds(on).
  • Ultra-low gate charge (164 nC).
  • TO-247-4L package for through-hole mounting.

NTH4L025N065SC1 Applications

  • Ideal for switching power supplies.
  • Suitable for solar inverter designs.
  • Used in uninterruptable power supplies.
  • Applicable for energy storage systems.

NTH4L025N065SC1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTH4L025N065SC1 MOSFET?

The drain-to-source voltage (Vdss) is 650 V.

What is the typical on-resistance for the NTH4L025N065SC1 MOSFET?

The typical on-resistance is 19 mOhm at 18V Vgs and 25 mOhm at 15V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NTH4L025N065SC1 MOSFET supplied in?

It is supplied in a TO-247-4L package.

What are the typical applications for the NTH4L025N065SC1?

Typical applications include SMPS (Switching Mode Power Supplies), Solar Inverters, UPS (Uninterruptable Power Supplies), and Energy Storages.

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