| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,800 pcs
|
10800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,760 pcs
|
2760 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTH4L022N120M3S is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for demanding applications. It offers a maximum drain-source voltage of 1200V and a typical on-resistance of 22 mOhm at 18V gate-source voltage, with a maximum specified at 30 mOhm @ 40A, 18V.
This MOSFET boasts an ultra-low gate charge of 137 nC and low output capacitance (Coss) of 146 pF, enabling high-speed switching with reduced losses. It is 100% avalanche tested for enhanced reliability.
The device is housed in a TO-247-4L package, suitable for through-hole mounting. Key electrical characteristics include a gate-to-source voltage range of -10V to +22V and a gate threshold voltage of 4.4V at 20mA. With a continuous drain current rating of 89A at 25°C and a maximum power dissipation of 348W, it is well-suited for applications such as solar inverters, electric vehicle charging stations, UPS, energy storage systems, and SMPS.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 1200 V.
The typical on-resistance (Rds(on)) is 22 mOhm at VGS = 18 V, with a maximum of 30 mOhm @ 40A, 18V.
The operating junction and storage temperature range is -55°C to +175°C.
The device is supplied in a TO-247-4L package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.