Mfr Part #:

NTH4L022N120M3S

Name: NTH4L022N120M3S
Brand: On Semiconductor
SKU: NTH4L022N120M3S
Availability: InStock

Mfr Name: On Semiconductor

Description:

SIC MOS TO247-4L 22MOHM 1200V

✓ Total Stock: 11,800 pcs

NTH4L022N120M3S Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	10,800 pcs On Request	10800 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

Short technical summary and product information.

SIC MOS TO247-4L 22MOHM 1200V

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

NVH4L022N120M3S

On Semiconductor

SIC MOS TO247-4L 22MOHM 1200V

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	68A (Tc)
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	151 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	3175 pF @ 800 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	352W (Tc)
Rds On (Max) @ Id, Vgs	30mOhm @ 40A, 18V
Supplier Device Package	TO-247-4L
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	4.4V @ 20mA