NTH4L020N090SC1 The ON Semiconductor NTH4L020N090SC1 is an N-Channel Silicon Carbide MOSFET designed for high-performance applications. It features a 900V drain-to-source voltage and a low on-resistance.
Mfr Part #:

NTH4L020N090SC1

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTH4L020N090SC1 is an N-Channel Silicon Carbide MOSFET designed for high-performance applications. It features a 900V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 5,545 pcs
$ Price Range: $0.99

NTH4L020N090SC1 Available from 2 distributors

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✓ Non-Authorised
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4,500 pcs
4500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,045 pcs
1045 pcs On Request 1 On Request On Request On Request On Request On Request

NTH4L020N090SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTH4L020N090SC1 Description

Short technical summary and product information.

The ON Semiconductor NTH4L020N090SC1 is an N-Channel Silicon Carbide (SiC) MOSFET belonging to the EliteSiC family. This device is engineered for demanding applications requiring high efficiency and power density.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 900V and a continuous drain current of 116A at 25°C case temperature. The on-resistance (Rds(on)) is rated at a maximum of 28mOhm at 60A and 15V gate-source voltage, with typical values as low as 20mOhm at 15V and 16mOhm at 18V. It boasts a low gate charge (Qg) of 196 nC at 15V and a low effective output capacitance (Coss) of 296 pF.

 

This MOSFET operates within a junction temperature range of -55°C to 175°C. It is housed in a TO-247-4L package, suitable for through-hole mounting. The device is designed for applications such as UPS, DC-DC converters, and boost inverters, leveraging the benefits of Silicon Carbide technology for improved performance and reliability.

NTH4L020N090SC1 Quick Information

Product Type: MOSFET
Canonical Name: NTH4L020N090SC1 N-Channel Silicon Carbide MOSFET
Subcategory: N-Channel

NTH4L020N090SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NTH4L020N090SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTH4L020N090SC1 Features

  • 900V drain-to-source breakdown voltage.
  • Low on-resistance of 28mOhm maximum.
  • Ultra low gate charge of 196 nC.
  • Silicon Carbide (SiC) technology.
  • TO-247-4L through-hole package.

NTH4L020N090SC1 Applications

  • High-voltage power switching circuits
  • Industrial motor drives
  • Renewable energy inverters
  • Electric vehicle power systems

NTH4L020N090SC1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTH4L020N090SC1?

The maximum drain-to-source voltage is 900 V.

What is the typical on-resistance of the NTH4L020N090SC1 MOSFET?

The typical on-resistance is 20 mOhm at 15V gate-source voltage.

What is the continuous drain current rating?

The continuous drain current is 116A at 25°C case temperature.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package type is the NTH4L020N090SC1 MOSFET supplied in?

It is supplied in a TO-247-4L package.

Is the NTH4L020N090SC1 RoHS compliant?

Yes, it is RoHS3 Compliant.

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