NTH4L015N065SC1 The On Semiconductor NTH4L015N065SC1 is a Silicon Carbide N-Channel MOSFET. It offers a 650V drain-source voltage and 142A continuous drain current.
Mfr Part #:

NTH4L015N065SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTH4L015N065SC1 is a Silicon Carbide N-Channel MOSFET. It offers a 650V drain-source voltage and 142A continuous drain current.
✓ Total Stock: 13,850 pcs
$ Price Range: $0.99

NTH4L015N065SC1 Available from 1 distributor

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NTH4L015N065SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTH4L015N065SC1 Description

Short technical summary and product information.

The NTH4L015N065SC1 from On Semiconductor is a high-performance Silicon Carbide (SiC) N-Channel MOSFET. This device is designed for demanding applications, featuring a 650V drain-to-source voltage (VDSS) and a maximum continuous drain current of 142A at 25°C.

 

Key electrical characteristics include a low typical on-resistance (RDS(on)) of 12 mOhm at 18V gate-source voltage, a maximum Rds(on) of 18 mOhm at 75A and 18V, and an ultra-low gate charge (Qg) of 283 nC. The device also boasts a high-speed switching capability with low output capacitance (Coss) of 430 pF.

 

Operating within a junction temperature range of -55°C to 175°C, the NTH4L015N065SC1 has a maximum power dissipation of 500W at 25°C. It is housed in a TO-247-4L package, suitable for through-hole mounting.

 

Typical applications for this MOSFET include Switching Mode Power Supplies (SMPS), solar inverters, Uninterruptable Power Supplies (UPS), and energy storage systems. The device is RoHS compliant and Halide free.

NTH4L015N065SC1 Quick Information

Product Type: MOSFET
Canonical Name: NTH4L015N065SC1 Silicon Carbide N-Channel MOSFET
Subcategory: N-Channel

NTH4L015N065SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NTH4L015N065SC1 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTH4L015N065SC1 Features

  • 650V drain-source voltage rating.
  • 142A maximum continuous drain current.
  • Low 12 mOhm typical Rds(on).
  • Ultra-low gate charge of 283 nC.
  • TO-247-4L package for through-hole mounting.

NTH4L015N065SC1 Applications

  • Suitable for SMPS applications.
  • Ideal for solar inverter designs.
  • Used in UPS systems.
  • Applicable for energy storage.

NTH4L015N065SC1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTH4L015N065SC1?

The drain-to-source voltage (VDSS) is 650 V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 142A at 25°C.

What is the typical on-resistance (RDS(on)) of the NTH4L015N065SC1?

The typical on-resistance is 12 mOhm at a gate-source voltage of 18V.

What is the operating temperature range for this device?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NTH4L015N065SC1 supplied in?

It is supplied in a TO-247-4L package.

Is the NTH4L015N065SC1 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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