Mfr Part #:

NTGS4111PT1G

The On Semiconductor NTGS4111PT1G is a P-Channel MOSFET designed for battery management and load switching applications. It features a 30V drain-to-source voltage and a 2.6A continuous drain current.

✓ Total Stock: 149,469 pcs

$ Price Range: $0.99

NTGS4111PT1G Available from 9 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	117,489 pcs On Request	117489 pcs	On Request	1	On Request	On Request	18+	On Request	On Request
Seba Components ✓ Non-Authorised Inventory information	12,000 pcs On Request	12000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	6,000 pcs On Request	6000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,020 pcs On Request	4020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	3,600 pcs On Request	3600 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	3,314 pcs On Request	3314 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	1,500 pcs On Request	1500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Rayichip ✓ Non-Authorised Inventory information	546 pcs On Request	546 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NTGS4111PT1G Description

Short technical summary and product information.

The On Semiconductor NTGS4111PT1G is a P-Channel MOSFET utilizing trench technology for low Rds(on). It is suitable for portable applications due to its low profile TSOP-6 package, saving board space.

Key electrical specifications include a Drain-to-Source Voltage (Vdss) of 30V and a Continuous Drain Current (Id) of 2.6A at 25°C (Ta). The Rds(on) is specified at a maximum of 60mOhm at 3.7A and 10V gate-source voltage. The Gate Threshold Voltage (Vgs(th)) is a maximum of 3V at 250µA.

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is available in a surface mount 6-TSOP package, also referred to as SOT-23-6 Thin, TSOT-23-6. The standard package quantity is 3000 units, supplied on tape and reel or cut tape.

Applications include battery management and switching, load switching, and battery protection. The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

NTGS4111PT1G Quick Information

Product Type: MOSFET

Canonical Name: NTGS4111PT1G P-Channel MOSFET

Subcategory: Power MOSFET

NTGS4111PT1G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NTGS4111PT1G Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTGS4111PT1G Features

P-Channel MOSFET with 30V Vdss.
Continuous drain current of 2.6A.
Low Rds(on) of 60mOhm at 3.7A.
Surface mount 6-TSOP package.
Operates from -55°C to 150°C.

NTGS4111PT1G Applications

Used in power switching circuits
Suitable for load control applications
Ideal for motor driver circuits
Applicable in industrial power management

NTGS4111PT1G FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage of the NTGS4111PT1G?

-30 V

What is the maximum gate-to-source voltage for this MOSFET?

±20V

What is the continuous drain current at 25°C?

2.6A

What is the operating temperature range?

-55°C to 150°C

What package type is used for this device?

6TSOP

Is the NTGS4111PT1G RoHS compliant?

Yes, RoHS3 Compliant

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	2.6A (Ta)
Drain to Source Voltage (Vdss)	-30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	750 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	630mW (Ta)
Rds On (Max) @ Id, Vgs	60mOhm @ 3.7A, 10V
Storage Temperature	°C ~ °C
Supplier Device Package	6-TSOP
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA