NTGS3455T1G The On Semiconductor NTGS3455T1G is a P-Channel MOSFET with a 30V drain-to-source voltage and a continuous drain current of 2.5A. It is housed in a compact SOT-23-6 Thin package.
Mfr Part #:

NTGS3455T1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTGS3455T1G is a P-Channel MOSFET with a 30V drain-to-source voltage and a continuous drain current of 2.5A. It is housed in a compact SOT-23-6 Thin package.
✓ Total Stock: 66,066 pcs
$ Price Range: $0.99

NTGS3455T1G Available from 5 distributors

✓ Authorised
✓ Non-Authorised

NTGS3455T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTGS3455T1G Description

Short technical summary and product information.

The NTGS3455T1G from ON Semiconductor is a P-Channel MOSFET designed for power management applications in portable and battery-powered products. It features a drain-to-source voltage of 30V and a continuous drain current of 2.5A at 25°C, with a maximum power dissipation of 500mW at 25°C.

 

This MOSFET operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a gate-to-source voltage of ±20V, a gate threshold voltage of 3V at 250µA, and a maximum on-resistance of 100mOhm at 3.5A and 10V. The input capacitance is 480pF at 5V, and the gate charge is 13nC at 10V.

 

The device is supplied in a SOT-23-6 Thin, TSOT-23-6 surface mount package, making it suitable for space-constrained designs. It is classified as RoHS3 Compliant, MSL 1, and REACH Unaffected, though these compliance statuses are unverified.

 

This part is discontinued and not recommended for new designs.

NTGS3455T1G Quick Information

Product Type: MOSFET
Series: NTGS3455T1G
Canonical Name: NTGS3455T1G P-Channel MOSFET
Subcategory: P-Channel

NTGS3455T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTGS3455T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTGS3455T1G Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 2.5A at 25°C.
  • Low on-resistance of 100mOhm at 3.5A, 10V.
  • Compact SOT-23-6 Thin surface mount package.
  • Wide operating temperature range of -55°C to 150°C.

NTGS3455T1G Applications

  • Power management in portable products.
  • Used in battery-powered devices.
  • Suitable for cellular telephones.
  • Applicable to PCMCIA cards.

NTGS3455T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTGS3455T1G?

The drain-to-source voltage is 30V.

What is the continuous drain current of the NTGS3455T1G?

The continuous drain current is 2.5A at 25°C.

What is the maximum on-resistance for the NTGS3455T1G?

The maximum on-resistance is 100mOhm at 3.5A and 10V.

What is the operating temperature range of the NTGS3455T1G?

The operating temperature range is -55°C to 150°C.

What package type is the NTGS3455T1G MOSFET in?

The NTGS3455T1G is in a SOT-23-6 Thin, TSOT-23-6 package.

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