| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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574,753 pcs
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574753 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This P-Channel MOSFET from ON Semiconductor, part number NTGS3443T2G, is designed for power management in portable and battery-powered products. It features a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current of 2.2A at 25°C ambient temperature.
The device offers a low on-resistance of 65mOhm at 4.4A and 4.5V Vgs, contributing to higher efficiency and extended battery life. The gate-to-source voltage range is ±12V, with a threshold voltage of 1.5V at 250µA. Input capacitance (Ciss) is 565pF at 5V, and gate charge (Qg) is 15nC at 4.5V Vgs.
Packaged in a miniature SOT-23-6 Thin (TSOT-23-6) surface mount package, the NTGS3443T2G is suitable for space-constrained applications. It operates within a temperature range of -55°C to 150°C (TJ). The MOSFET technology ensures efficient switching and power control.
This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions. Its REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTGS3443T2G is 20V.
The continuous drain current rating for the NTGS3443T2G is 2.2A.
The Rds(on) is a maximum of 65mOhm at 4.4A drain current and 4.5V gate-source voltage.
The NTGS3443T2G is supplied in a SOT-23-6 Thin, TSOT-23-6 package.
The operating temperature range is -55°C to 150°C (TJ).