| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
135,000 pcs
|
135000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,142 pcs
|
3142 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
1,357 pcs
|
1357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
978 pcs
|
978 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
890 pcs
|
890 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTGD4167CT1G from On Semiconductor is a dual complementary MOSFET featuring both N-channel and P-channel devices within a single, compact 6-TSOP package. This configuration provides design flexibility for various applications.
Key electrical specifications include a 30V drain-to-source breakdown voltage (Vdss) and continuous drain currents of up to 2.6A for the N-channel and -1.9A for the P-channel at 25°C. The Rds(on) is rated at a maximum of 90mOhm at 2.6A and 4.5V Vgs, indicating low conduction losses. With a logic-level gate feature, it is suitable for low-voltage applications.
This MOSFET utilizes leading-edge trench technology for low on-resistance and reduced gate charge, improving switching response. It operates over a wide temperature range from -55°C to 150°C.
Applications include DC-DC conversion circuits and load/power switching with level shifting. The small 3x3mm footprint and surface mount capability make it suitable for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 2.6A for the N-channel and -1.9A for the P-channel at 25°C.
The Rds(on) is a maximum of 90mOhm at 2.6A and 4.5V.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in a 6-TSOP package.
Yes, this is a Pb-Free Device and is RoHS3 Compliant.