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NTF2955T1G The ON Semiconductor NTF2955T1G is a P-Channel MOSFET with a drain-to-source voltage of -60V and a continuous drain current of 1.7A. It is housed in a SOT-223 package.
Mfr Part #:

NTF2955T1G

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTF2955T1G is a P-Channel MOSFET with a drain-to-source voltage of -60V and a continuous drain current of 1.7A. It is housed in a SOT-223 package.
✓ Total Stock: 33,864 pcs
$ Price Range: $0.99

NTF2955T1G Available from 8 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NTF2955T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NTF2955T1G Description

Short technical summary and product information.

The ON Semiconductor NTF2955T1G is a P-Channel MOSFET designed for power management applications. It features a drain-to-source voltage of -60V and a continuous drain current of up to 1.7A at 85°C (Note 2). The device offers low RDS(on) with a typical value of 185mOhm at 2.4A and 10V gate drive.

 

This MOSFET is built using MOSFET (Metal Oxide) technology and is suitable for surface mounting in a TO-261-4, TO-261AA package, specifically the SOT-223 (TO-261) footprint. It operates within a temperature range of -55°C to 175°C (TJ).

 

Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 4V at 1mA. The device also exhibits an input capacitance of 492 pF at 25V and a gate charge of 14.3 nC at 10V. It is designed to withstand high energy in avalanche and commutation modes, with a single pulse avalanche energy rating of 225 mJ.

 

Applications for this MOSFET include power supplies, PWM motor control, converters, and general power management. The device is Pb-free and RoHS compliant.

NTF2955T1G Quick Information

Product Type: MOSFET
Series: NTF2955T1G
Canonical Name: P-Channel MOSFET
Subcategory: Single

NTF2955T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTF2955T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTF2955T1G Features

  • P-Channel MOSFET for power applications.
  • Rated for -60V drain-to-source voltage.
  • Continuous drain current up to 1.7A.
  • Surface mount SOT-223 package.
  • Designed for low RDS(on).

NTF2955T1G Applications

  • Suitable for power supplies.
  • Used in PWM motor control.
  • Applicable for converters.
  • Ideal for power management.

NTF2955T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTF2955T1G?

-60 V

What is the continuous drain current for the NTF2955T1G?

1.7 A (Ta = 25°C, Note 2)

What package type is the NTF2955T1G MOSFET supplied in?

SOT-223 (TO-261)

What is the operating temperature range for the NTF2955T1G?

-55°C ~ 175°C (TJ)

Is the NTF2955T1G RoHS compliant?

Yes, it is RoHS3 Compliant.

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