| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE Electronics NTE99 is a robust NPN Darlington bipolar junction transistor (BJT) designed for demanding applications requiring high voltage and current handling capabilities. It offers a collector-emitter breakdown voltage of 400V and can handle a continuous collector current of up to 50A, with a maximum power dissipation of 250W.
This transistor is housed in a TO-3 package, suitable for through-hole mounting, which facilitates efficient heat dissipation. The NTE99 exhibits a minimum DC current gain (hFE) of 25 at 20A and 5V, and a Vce saturation of 5V at 10A and 50A. Its operating temperature range is from -65°C to 200°C (TJ).
Key electrical characteristics include a collector cutoff current of 250µA. The NTE99 is suitable for power switching and amplification circuits where high current gain and voltage blocking are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 400V.
The maximum continuous collector current is 50A.
The maximum power dissipation is 250W.
The operating temperature range is -65°C to 200°C (TJ).
The NTE99 transistor is mounted using the Through Hole method.
The minimum DC current gain (hFE) is 25 at 20A and 5V.