| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Manufacturer Name | |
| Diode Capacitance | |
| Operating Temperature | |
| Peak Forward Surge Current | |
| Reverse Recovery Time | |
| SVHC Present | |
| Storage Temperature |
The NTE907 is a multi-diode Schottky array from NTE Electronics, supplied in a TO-5 package. It contains six diode units, with D1-D5 rated for 5V peak inverse voltage and D6 for 0.5V, all providing a common substrate connection with +20V/-1V peak diode-to-substrate voltage capability.
Electrically, the device offers a typical reverse recovery time of 1ns, a low diode capacitance of 0.65pF at -2V, and low forward voltage drop that ranges from 0.65-0.69V at 50µA to 0.81-0.90V at 10mA. Reverse leakage current is typically 0.016nA at -4V and maximum 100nA, while the diode-to-substrate leakage is 0.022nA typical at -10V. Power dissipation is rated at 100mW per diode unit and 600mW total for the package.
With an operating temperature range of -55°C to +125°C and storage range of -65°C to +150°C, the NTE907 suits high-speed switching, RF detector and low-leakage applications. The TO-5 metal can package provides robust thermal performance, with a maximum lead temperature of 265°C during soldering.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
TO-5.
-55°C to +125°C.
1ns typical.
0.65pF typical at VR = -2V.
25mA.
100mW per diode unit, 600mW total.
20V (typical and minimum) at -10µA.