| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE81 is a silicon NPN transistor manufactured by NTE Electronics, suitable for general purpose switching applications. It offers a maximum collector-emitter voltage (VCEO) of 30V and a continuous collector current (IC) of 500mA.
This transistor operates within a wide temperature range, from -65°C to +200°C (TJ). It is available in a TO-99-6 metal can package, designed for through-hole mounting.
Key electrical characteristics include a DC current gain (hFE) of 40 minimum at 150mA and 10V, and a Vce saturation of 1.2V maximum at 30mA and 300mA. The device has a frequency response up to 250MHz.
Thermal specifications include a junction-to-case thermal resistance of 70°C/W for all die equal power and 97°C/W for one die. The junction-to-ambient thermal resistance is 280°C/W for all die equal power and 304°C/W for one die.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE81 transistor is 30V.
The NTE81 transistor has a continuous collector current (IC) rating of 500mA.
The NTE81 transistor can operate in a temperature range from -65°C to +200°C (TJ).
The NTE81 transistor is supplied in a TO-99-6 Metal Can package.