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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE75 is a single NPN bipolar junction transistor (BJT) manufactured by NTE Electronics. It is designed for applications requiring a robust power transistor with a maximum collector-emitter voltage of 80V and a continuous collector current of up to 5A. The device has a power dissipation rating of 2W and a frequency response up to 120MHz.
This transistor features a high DC current gain (hFE) of 40 at 50mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 1.5V at 5A collector current and 500mA base current. It operates within a temperature range of -65°C to 200°C.
The NTE75 is packaged in a TO-111 stud mount configuration, suitable for chassis or stud mounting, facilitating efficient heat dissipation. It is classified as RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
This component is ideal for power switching and amplification circuits where reliability and performance are critical. Its specifications make it suitable for various industrial and electronic applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE75 is an NPN bipolar junction transistor.
The NTE75 transistor has a maximum collector-emitter voltage rating of 80V.
The NTE75 can handle a maximum continuous collector current of 5A.
The NTE75 transistor has a power dissipation rating of 2W.
The NTE75 operates within a temperature range of -65°C to 200°C.
The NTE75 is supplied in a TO-111-4, Stud package.