| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE65 is a surface-mount RF NPN transistor manufactured by NTE Electronics. It is designed for high-frequency applications, operating at up to 5GHz.
Key electrical specifications include a maximum collector current of 30mA and a collector-emitter voltage of 15V. The transistor offers a DC current gain (hFE) of 25 minimum at 14mA and 10V. Its noise figure is rated between 2.4dB and 3dB across a frequency range of 500MHz to 1GHz, with a power gain of 18dB.
The device is housed in a 3-SMD, flat lead package, suitable for surface mounting. It has a power dissipation rating of 180mW at 25°C. The operating temperature range is from -65°C to 150°C.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status. The NTE65 is presented as a direct replacement for other NTE parts, with consistent performance and package characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the NTE65 is 30mA.
The NTE65 transistor operates at a frequency of 5GHz.
The power dissipation of the NTE65 at 25°C is 180mW.
The NTE65 is available in a 3-SMD, flat lead package.
The NTE65 is RoHS3 Compliant.
The MSL rating for the NTE65 is 1 Unlimited.