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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE62 is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting. It features a robust TO-3 package, making it suitable for applications requiring significant power dissipation.
Key electrical characteristics include a maximum voltage rating of 900V and a continuous current handling capability of 3A. The transistor provides a minimum DC current gain (hFE) of 3 at 1.5A and 10V, with a saturation voltage (Vce(sat)) of 10V at 500mA and 1.5A. It is rated for a power dissipation of 50W and can operate at temperatures up to 150°C (TJ).
This component is ideal for power switching and amplification circuits where high voltage and current are required. Its through-hole mounting and TO-3 package facilitate easy integration into traditional PCB designs and power supply applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE62 transistor has a voltage rating of 900V.
The NTE62 transistor can handle a maximum continuous current of 3A.
The NTE62 transistor has a power dissipation rating of 50W.
The NTE62 transistor operates at temperatures up to 150°C (TJ).
The NTE62 transistor is supplied in a TO-204AA, TO-3 package.
The NTE62 transistor is designed for through-hole mounting.