| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The NTE61 is a single PNP bipolar transistor manufactured by NTE Electronics. It is designed for applications requiring a 140V collector-emitter voltage and can handle up to 20A of current. The transistor has a power dissipation rating of 250W.
This component features a DC current gain (hFE) of at least 25 at 5A and 2V. The saturation voltage (Vce) is a maximum of 1V at 500mA and 5A. Its operating frequency reaches up to 2MHz.
The NTE61 is suitable for through-hole mounting and comes in a TO-3 package. It operates within a temperature range of -65°C to 200°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $11.04 | $11.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the NTE61 is 140V.
The NTE61 can handle a maximum continuous current of 20A.
The NTE61 has a power dissipation rating of 250W.
The NTE61 operates within a temperature range of -65°C to 200°C (TJ).
The NTE61 transistor is mounted using the through-hole method.
The NTE61 comes in a TO-204AA, TO-3 package.