| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE60 is a complementary silicon power transistor from NTE Electronics, designed for high power audio, disk head positioners, and other linear applications. It features an NPN configuration and is housed in a TO-3 package.
Key electrical specifications include a collector-emitter sustaining voltage of 140V, a continuous collector current of 20A, and a continuous base current of 5A. The device offers a high DC current gain (hFE) of 25 minimum at 5A and 2V, with a collector-emitter saturation voltage of 1V maximum at 5A and 500mA base current. The total power dissipation is rated at 250W at 25°C.
Operating temperature ranges from -65°C to 200°C (TJ), with a storage temperature range also from -65°C to 200°C. The thermal resistance from junction to case is 0.70°C/W. The transistor has a current gain-bandwidth product of 2MHz minimum.
This transistor is suitable for applications requiring high power handling and linear operation. Its TO-3 package and robust specifications make it a reliable choice for demanding audio amplifier circuits and servo control systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) for the NTE60 is 140V.
The NTE60 can handle a continuous collector current (IC) of up to 20A.
The NTE60 has a total power dissipation (PD) of 250W at 25°C.
The operating junction temperature range (TJ) for the NTE60 is -65°C to 200°C.
The NTE60 is supplied in a TO-3 package.
The minimum DC current gain (hFE) for the NTE60 is 25 at an IC of 5A and VCE of 2V.
The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1V at an IC of 5A and IB of 500mA.