| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE59 is a PNP silicon bipolar junction transistor designed for high power audio output applications. It features a high power dissipation capability of 200W and a wide safe operating area.
Key electrical characteristics include a collector-emitter breakdown voltage of 200V and a continuous collector current of 17A. The DC current gain (hFE) is a minimum of 20 at 8A and 4V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 2.5V at 10A and 1A.
This transistor is housed in a 3-SIP (Single In-line Package) and is designed for through-hole mounting. The operating junction temperature range is from -55°C to +150°C.
With its robust specifications, the NTE59 is suitable for various power amplification and switching applications where high current and voltage handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE59 is 200V.
The NTE59 can handle a continuous collector current (IC) of 17A.
The NTE59 has a total device dissipation (PD) of 200W at 25°C.
The NTE59 has a maximum junction operating temperature of 150°C.
The NTE59 is a PNP silicon bipolar junction transistor.
The NTE59 is supplied in a 3-SIP package and is designed for through-hole mounting.