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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE58 is a high-power NPN silicon transistor manufactured by NTE Electronics, suitable for demanding audio output applications. It features a high collector-emitter breakdown voltage of 200V and can handle a continuous collector current of up to 17A.
With a total device dissipation of 200W at 25°C, the NTE58 is designed for robust performance. Its electrical characteristics include a minimum DC current gain (hFE) of 20 at 8A and 4V, and a maximum collector-emitter saturation voltage (VCE(sat)) of 2.5V at 1A and 10A.
The transistor operates at a junction temperature up to 150°C and has a cutoff frequency (fT) of 20MHz at 12V and 1A. It is housed in a 3-SIP package and designed for through-hole mounting.
Key specifications include a maximum collector-base voltage (VCBO) of 200V, a maximum emitter-base voltage (VEBO) of 6V, and a maximum continuous base current (IB) of 5A. The storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE58 transistor is 200V.
The NTE58 transistor has a continuous collector current (IC) rating of 17A.
The NTE58 transistor has a total device dissipation (PC) of 200W at 25°C.
The NTE58 transistor can operate at a junction temperature (TJ) up to 150°C.
The NTE58 transistor is supplied in a 3-SIP package.