| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE555 is a silicon PIN diode from NTE Electronics, specifically designed for high-efficiency UHF and VHF detector applications. It is also suitable for fast switching RF and digital circuits.
Key electrical characteristics include a maximum reverse voltage of 50V, typical forward voltage of 1.0V at 10mA, and very low diode capacitance of 0.48pF typical (1.0pF maximum) at 20V and 1MHz. The minority carrier lifetime is extremely low at 15ps typical (100ps maximum), enabling fast switching. Reverse leakage current is typically 7nA at 25V.
The diode is housed in an axial leaded package for through-hole mounting. It can dissipate up to 400mW at 25°C ambient, with a derating factor of 4mW/°C above 25°C. The operating junction temperature range is -55°C to +125°C, and storage temperature range is -65°C to +150°C.
Typical applications include UHF/VHF detectors, RF switching, and other fast switching RF circuits. The Schottky barrier construction provides stable characteristics without the need for cat-whisker contacts.
50V.
1.0V typical, 1.2V maximum at 10mA.
15ps typical, 100ps maximum.
0.48pF typical, 1.0pF maximum at 20V, 1MHz.
7nA typical, 200nA maximum at 25V.
Axial leaded through-hole package.
400mW maximum at 25°C, derate 4mW/°C above 25°C.