NTE50

The NTE50 is a robust PNP bipolar junction transistor manufactured by NTE Electronics, housed in a TO-202 through-hole package. Engineered for reliable performance in power switching and linear amplifier circuits, this component supports a maximum continuous collector current of 2A and withstands up to 100V across the collector-emitter terminals. The device features a low saturation voltage of 0.18V at 250mA base drive, ensuring efficient operation with minimal power loss during conduction.

Thermal management is supported by a junction-to-case thermal resistance of 12.5°C/W and a total power dissipation rating of 1W at ambient temperature, scaling down to 8mW per degree Celsius above 25°C. When mounted directly to a heatsink, the unit can dissipate up to 10W at case temperature. The operating junction temperature range spans from -55°C to +150°C, providing stability across demanding industrial and commercial environments.

Key electrical characteristics include a DC current gain ranging from 60 to 125 depending on collector current, a transition frequency up to 150MHz, and low output capacitance between 6pF and 12pF. These specifications make the NTE50 suitable for audio output stages, motor control drivers, and general-purpose high-current switching tasks requiring dependable PNP topology.