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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE48 is a silicon NPN-Darlington transistor manufactured by NTE Electronics. It is designed for through-hole mounting and comes in a TO-92L package.
Key electrical specifications include a maximum power dissipation of 8W and a current rating of 1A. The transistor has a minimum breakdown voltage of 53.3V and a reverse standoff voltage of 48V. Its DC current gain (hFE) is a minimum of 4000 at 1A and 5V, with a Vce saturation of 1.5V maximum at 2mA and 1A. The operating frequency is up to 1GHz.
This transistor operates within a temperature range of -55°C to 175°C. The mounting type is through-hole, and it is supplied in a TO-92L package, also referred to as TO-226-3, TO-92-3 Long Body.
This component is suitable for various general-purpose amplification and switching applications where high gain is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range for the NTE48 transistor is -55°C to 175°C.
The NTE48 transistor is supplied in a TO-92L package, also known as TO-226-3, TO-92-3 Long Body.
The maximum power dissipation for the NTE48 transistor is 8W.
The NTE48 transistor has a current rating of 1A.
The NTE48 transistor has a voltage rating of 50V.
The DC current gain (hFE) of the NTE48 transistor is a minimum of 4000 at 1A and 5V.