NTE4153NT1G The ON Semiconductor NTE4153NT1G is an N-Channel MOSFET designed for various applications. It features a 20V drain-to-source voltage and a continuous drain current of 915mA.
Mfr Part #:

NTE4153NT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTE4153NT1G is an N-Channel MOSFET designed for various applications. It features a 20V drain-to-source voltage and a continuous drain current of 915mA.
✓ Total Stock: 64,841 pcs
$ Price Range: $0.99

NTE4153NT1G Available from 4 distributors

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NTE4153NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTE4153NT1G Description

Short technical summary and product information.

The ON Semiconductor NTE4153NT1G is a single N-Channel MOSFET suitable for applications such as load/power switches, power supply converter circuits, and battery management. It offers a drain-to-source voltage (Vds) of 20V and a continuous drain current (Id) of 915mA at 25°C.

 

This MOSFET has a low threshold voltage, rated at 1.5V, and features ESD protected gate. The Rds On is specified at a maximum of 230mOhm at 600mA drain current and 4.5V gate-source voltage. It operates within a temperature range of -55°C to 150°C.

 

The NTE4153NT1G comes in a compact SC-89 (SOT-490) surface mount package, making it suitable for space-constrained designs. Its technology is MOSFET (Metal Oxide), and it is classified as an N-Channel FET type.

 

Key electrical characteristics include an input capacitance (Ciss) of 110 pF at 16V and a gate charge (Qg) of 1.82 nC at 4.5V. The maximum power dissipation is 300mW (Tj).

NTE4153NT1G Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: Single

NTE4153NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE4153NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE4153NT1G Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current of 915mA at 25°C.
  • Low threshold voltage rated at 1.5V.
  • Surface mount SC-89 package for compact designs.
  • Wide operating temperature range from -55°C to 150°C.

NTE4153NT1G Applications

  • Ideal for load and power switches.
  • Suitable for power supply converter circuits.
  • Used in battery management systems.
  • Applicable for portable electronic devices.

NTE4153NT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating for the NTE4153NT1G?

The drain-to-source voltage (Vds) for the NTE4153NT1G is 20V.

What is the continuous drain current of the NTE4153NT1G?

The continuous drain current (Id) for the NTE4153NT1G is 915mA at 25°C.

What is the Rds On for the NTE4153NT1G?

The Rds On is a maximum of 230mOhm at 600mA drain current and 4.5V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range for the NTE4153NT1G is -55°C to 150°C.

What package type is the NTE4153NT1G available in?

The NTE4153NT1G is available in the SC-89, SOT-490 package.

What is the RoHS status of the NTE4153NT1G?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NTE4153NT1G?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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