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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16 pcs
|
16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Base Current | |
| Collector Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Continuous Collector Current | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| PD (Maximum @ Tc=25 °C) | |
| Pd (Maximum @ Ta=25 °C) | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Tj | |
| Transistor Type | |
| VCE(sat) (Maximum @ IC = 50 mA, IB = 4 mA) | |
| VCEO (Maximum) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum/Maximum @ IC = 20 mA, VCE = 10 V) | |
| hfe (Minimum @ Ic=2 mA, Vce=10 V) |
The NTE396 is a silicon NPN bipolar junction transistor (BJT) manufactured by NTE Electronics. It is designed for applications requiring power amplification and high-speed switching.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 350V and a continuous collector current (IC) of 1A. The device also features a maximum base current (IB) of 500mA and a maximum collector-dissipation rating of 1W at 25°C ambient temperature, or 5W at 25°C case temperature.
This transistor operates within a junction temperature range of -65°C to +200°C and has a storage temperature range of -65°C to +200°C. The thermal resistance from junction to case (RthJC) is 35°C/W, and from junction to ambient (RthJA) is 175°C/W.
The NTE396 is housed in a TO-39 (TO-205AD) metal can package and is designed for through-hole mounting. Its specifications make it suitable for various electronic circuits requiring robust switching and amplification capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE396 is 350V.
The NTE396 transistor has a continuous collector current (IC) rating of 1A.
The NTE396 transistor is supplied in a TO-39 (TO-205AD, TO-39-3 Metal Can) package.
The operating junction temperature range for the NTE396 is -65°C to +200°C.
The DC current gain (hFE) of the NTE396 is a minimum of 40 at an IC of 20mA and VCE of 10V.
The collector-emitter saturation voltage (VCE(sat)) for the NTE396 is a maximum of 0.5V at an IB of 4mA and IC of 50mA.