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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Polarity | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE392 is a silicon NPN transistor manufactured by NTE Electronics, suitable for general purpose power amplifier and switching applications. It is housed in a TO-3PN package and designed for through-hole mounting.
Key electrical specifications include a maximum collector current of 25A and a maximum collector-emitter voltage of 100V. The transistor offers a maximum power dissipation of 125W and operates within a temperature range of -65°C to 150°C. Its DC current gain (hFE) is a minimum of 25 at 1.5A and 4V, with a Vce saturation of 4V at 5A and 25A. The frequency response extends to 3MHz.
This component is designed for robust performance in power applications. Its complementary PNP counterpart is the NTE393. The through-hole mounting type ensures secure installation in various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 25A.
The maximum collector-emitter voltage is 100V.
The maximum power dissipation is 125W.
The operating temperature range is -65°C to 150°C.
The NTE392 is supplied in a TO-3PN package.
The NTE392 is RoHS3 Compliant.