| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE390 is a general-purpose NPN silicon transistor designed for power amplifier and switching applications. It is housed in a TO-3PN package.
Key electrical characteristics include a collector-emitter sustaining voltage of 100V and a continuous collector current rating of 10A. The DC current gain (hFE) is typically 40 at 1A and 4V, with a range of 20 to 100 at 3A and 4V. The transistor offers a current-gain bandwidth product of 3MHz at 0.5A and 10V.
Absolute maximum ratings specify a collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 10A. The total power dissipation is rated at 80W at 25°C. The operating junction temperature range is -65°C to +150°C.
This transistor is suitable for various power amplification and switching tasks where its robust current and voltage handling capabilities are beneficial. The TO-3PN package is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 100V.
The maximum continuous collector current is 10A.
The typical DC current gain (hFE) is 40 at 1A and 4V.
The operating junction temperature range is -65°C to +150°C.
The NTE390 is supplied in a TO-3PN package.