| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE389 is a silicon NPN power transistor designed for high-voltage applications, specifically in CRT horizontal deflection circuits. It is housed in a TO-3 package, also known as TO-204AA.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 750V and a collector-emitter voltage (VCEX) of 1500V. The continuous collector current (IC) is rated at 4A, with a maximum collector-emitter saturation voltage (VCE(sat)) of 5V at 1.2A/3A. The transistor has a typical current gain-bandwidth product (fT) of 4MHz.
Thermal characteristics are important for this device, with a maximum power dissipation of 100W at 25°C case temperature, and a junction-to-case thermal resistance of 1.25°C/W. The operating junction temperature range is -65°C to +150°C.
This transistor is mounted via a through-hole method. It is suitable for applications requiring high voltage switching and amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) of the NTE389 is 750V.
The maximum continuous collector current (IC) for the NTE389 is 4A.
The NTE389 has a maximum power dissipation of 100W at 25°C.
The operating junction temperature range for the NTE389 is -65°C to +150°C.
The NTE389 transistor is supplied in a TO-3 (TO-204AA) package.