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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE387 is a silicon NPN transistor from NTE Electronics, suitable for power amplifier and switching applications. It features a high Collector-Emitter Sustaining Voltage of 150V and a high DC Current Gain. The transistor can handle a continuous collector current of 50A and a peak current of 100A, with a total device dissipation of 250W at 25°C.
Designed for robust performance, the NTE387 has a low Collector-Emitter Saturation Voltage and fast switching times. It operates over a wide temperature range from -65°C to +200°C, with a junction-to-case thermal resistance of 0.70°C/W. The component is housed in a TO-3 package and is designed for through-hole mounting.
Key electrical characteristics include a DC Current Gain (hFE) of 50 minimum at 1A, 4V, and a Collector-Emitter Saturation Voltage of 1V maximum at 20A, 2A. The Current Gain-Bandwidth Product (fT) is 30MHz at 1A, 10V.
This transistor is well-suited for applications requiring high power handling and reliable switching performance in demanding environments.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter sustaining voltage (VCEO) for the NTE387 transistor is 150V.
The NTE387 transistor has a continuous collector current (IC) rating of 50A.
The total device dissipation (PD) for the NTE387 transistor is 250W at 25°C.
The operating junction temperature range (TJ) for the NTE387 transistor is -65°C to +200°C.
The NTE387 transistor is supplied in a TO-3 package.
The minimum DC Current Gain (hFE) for the NTE387 at IC = 1A and VCE = 4V is 50.
The maximum Collector-Emitter Saturation Voltage (VCE(sat)) for the NTE387 at IC = 20A and IB = 2A is 1V.