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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE384 is a multiple epitaxial silicon NPN power transistor housed in a TO-66 package. Its multiple-epitaxial construction enhances volt-ampere characteristics and provides fast switching speeds. This transistor is characterized for use in inverters operating directly from a rectified 110V power line and can also be used in series bridge configurations on a 220V line due to its leakage current specification at 450V.
Key electrical specifications include a high collector-emitter sustaining voltage of 350V (VCEO(sus)) and up to 375V (VCER(sus)). It can handle a continuous collector current of 7A, with a peak capability of 10A. The device offers a maximum power dissipation of 45W at TC ≤ +25°C and VCE ≤ 40V. The operating junction temperature range is from -65°C to +200°C.
Designed for high voltage power amplification and switching applications, the NTE384's VEBO rating of 9V simplifies drive transformer requirements in inverter circuits. The transistor type is NPN, and it is available in a TO-66 package suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) is 350V with the base open, and up to 375V (VCER(sus)) with an external base-emitter resistance of 50 ohms or less.
The NTE384 can handle a continuous collector current of 7A.
The maximum power dissipation (PT) is 45W, specified at TC ≤ +25°C and VCE ≤ 40V.
The operating junction temperature range is from -65°C to +200°C.
The NTE384 is supplied in a TO-66 package.