NTE384 The NTE384 is an NPN silicon power transistor designed for high voltage applications. It features a TO-66 package and robust electrical characteristics.
Mfr Part #:

NTE384

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The NTE384 is an NPN silicon power transistor designed for high voltage applications. It features a TO-66 package and robust electrical characteristics.
Total Stock: 2 pcs
$ Price Range: $0.99

NTE384 Available from 1 distributor

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NTE384 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Temperature
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TC ≤ +25 °C, VCE ≤ 40 V)
Storage Temperature
Supplier Device Package
Supplier Package
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Maximum
current (Maximum @ Peak)
voltage (Minimum @ With External Base–Emitter Resistance (RBE) ≤ 50Ω)
voltage (Minimum @ With Reverse Bias (VBE) of –1.5 V)

NTE384 Description

Short technical summary and product information.

The NTE384 is a multiple epitaxial silicon NPN power transistor housed in a TO-66 package. Its multiple-epitaxial construction enhances volt-ampere characteristics and provides fast switching speeds. This transistor is characterized for use in inverters operating directly from a rectified 110V power line and can also be used in series bridge configurations on a 220V line due to its leakage current specification at 450V.

 

Key electrical specifications include a high collector-emitter sustaining voltage of 350V (VCEO(sus)) and up to 375V (VCER(sus)). It can handle a continuous collector current of 7A, with a peak capability of 10A. The device offers a maximum power dissipation of 45W at TC ≤ +25°C and VCE ≤ 40V. The operating junction temperature range is from -65°C to +200°C.

 

Designed for high voltage power amplification and switching applications, the NTE384's VEBO rating of 9V simplifies drive transformer requirements in inverter circuits. The transistor type is NPN, and it is available in a TO-66 package suitable for through-hole mounting.

NTE384 Quick Information

Product Type: NPN Transistor
Canonical Name: NPN Silicon Transistor
Subcategory: Single

NTE384 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE384 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE384 Features

  • High voltage rating up to 375V.
  • Handles 7A continuous collector current.
  • Maximum power dissipation of 45W.
  • Wide operating temperature range.
  • TO-66 package for through-hole mounting.

NTE384 Applications

  • Suitable for inverter applications.
  • Used in high voltage power circuits.
  • Designed for power amplification.
  • Ideal for switching applications.

NTE384 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NTE384 transistor?

The collector-emitter sustaining voltage (VCEO(sus)) is 350V with the base open, and up to 375V (VCER(sus)) with an external base-emitter resistance of 50 ohms or less.

What is the continuous collector current rating for the NTE384?

The NTE384 can handle a continuous collector current of 7A.

What is the maximum power dissipation of the NTE384 transistor?

The maximum power dissipation (PT) is 45W, specified at TC ≤ +25°C and VCE ≤ 40V.

What is the operating temperature range for the NTE384?

The operating junction temperature range is from -65°C to +200°C.

What type of package is the NTE384 transistor in?

The NTE384 is supplied in a TO-66 package.

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