| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE376 is a silicon NPN transistor manufactured by NTE Electronics, suitable for applications such as TV power supply drivers and audio output stages. It offers a high collector-emitter breakdown voltage of 300V and a maximum collector current of 200mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 200 at 50mA and 10V, and a current gain-bandwidth product (fT) of at least 60MHz. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.5V at 100mA collector current and 10mA base current. The base-emitter voltage (VBE) is typically 0.66V at 50mA collector current.
This transistor is housed in a TO-220 package and is designed for through-hole mounting. It has a power dissipation rating of 15W and an operating junction temperature up to 150°C. The storage temperature range is from -45°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE376 has a maximum collector-emitter voltage of 300V.
The NTE376 transistor can handle a maximum collector current of 200mA.
The NTE376 has a power dissipation rating of 15W.
The NTE376 operates at a maximum junction temperature of 150°C.
The NTE376 is an NPN transistor.
The NTE376 is supplied in a TO-220-3 package.