Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Cob (Typical/Maximum @ VCB = 50 V, IE = 0, f = 1 MHz) | |
| Collector-Base Breakdown Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector–Base Current | |
| Collector–Emitter Current | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Transistor Type | |
| VBE (Typical/Maximum @ VCE = 10 V, IC = 50 mA) | |
| VCE(sat) (Typical/Maximum @ IC = 100 mA, IB = 10 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| fT (Minimum/Typical @ VCE = 20 V, IC = 30 mA) | |
| hFE (Minimum/Maximum @ VCE=10 V, IC=50 mA) |
The NTE376 is a silicon NPN transistor manufactured by NTE Electronics, suitable for applications such as TV power supply drivers and audio output stages. It offers a high collector-emitter breakdown voltage of 300V and a maximum collector current of 200mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 200 at 50mA and 10V, and a current gain-bandwidth product (fT) of at least 60MHz. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.5V at 100mA collector current and 10mA base current. The base-emitter voltage (VBE) is typically 0.66V at 50mA collector current.
This transistor is housed in a TO-220 package and is designed for through-hole mounting. It has a power dissipation rating of 15W and an operating junction temperature up to 150°C. The storage temperature range is from -45°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE376 has a maximum collector-emitter voltage of 300V.
The NTE376 transistor can handle a maximum collector current of 200mA.
The NTE376 has a power dissipation rating of 15W.
The NTE376 operates at a maximum junction temperature of 150°C.
The NTE376 is an NPN transistor.
The NTE376 is supplied in a TO-220-3 package.