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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE373 is a single NPN bipolar junction transistor (BJT) manufactured by NTE Electronics. It is designed for through-hole mounting and comes in a TO-126 package.
This transistor features a maximum collector-emitter voltage of 160V and a maximum collector current of 1.5A. It has a power dissipation rating of 1W. The DC current gain (hFE) is a minimum of 60 at 150mA and 5V, with a Vce saturation of 1V maximum at 50mA and 500mA. Its frequency response extends to 140MHz.
The operating temperature range for the NTE373 is up to 150°C (TJ). It is suitable for various general-purpose amplification and switching applications where these electrical characteristics are required.
This component is identified by the DK Part Number 2368-NTE373-ND. The package is specified as TO-225AA, TO-126-3, with a supplier device package of TO-126.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE373 transistor has a maximum voltage rating of 160V.
The NTE373 transistor can handle a maximum continuous current of 1.5A.
The NTE373 transistor has a power dissipation rating of 1W.
The minimum DC current gain (hFE) for the NTE373 is 60 at 150mA and 5V.
The NTE373 transistor operates at temperatures up to 150°C (TJ).
The NTE373 transistor is supplied in a TO-126 package.
The NTE373 transistor is mounted using the through-hole method.