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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE36MP is a single NPN bipolar junction transistor (BJT) manufactured by NTE Electronics. This component is designed for through-hole mounting and comes in a TO-3P package. It features a maximum collector-emitter breakdown voltage of 140V and can handle a continuous collector current of up to 12A. The maximum power dissipation is rated at 100W.
Key electrical characteristics include a transition frequency of 15MHz and a minimum DC current gain (hFE) of 60 at 1A and 5V. The saturation voltage (Vce Sat) is a maximum of 2.5V at 500mA and 5A. The collector cutoff current is a maximum of 100µA. The operating temperature range is up to 150°C (TJ).
This transistor is suitable for various general-purpose amplification and switching applications where its voltage and current ratings are appropriate. Its robust TO-3P package is well-suited for applications requiring good thermal dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the NTE36MP is 140V.
The NTE36MP can handle a maximum continuous collector current of 12A.
The NTE36MP transistor has a maximum power dissipation of 100W.
The NTE36MP operates at temperatures up to 150°C (TJ).
The NTE36MP is designed for through-hole mounting.
The NTE36MP is supplied in a TO-3P package.