| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE369 is an NPN silicon transistor manufactured by NTE Electronics, suitable for high voltage inverters, converters, regulators, and switching circuits. It is housed in a TO-66 package.
Key electrical specifications include a collector-base voltage (VCBO) of 800V and a collector-emitter voltage (VCEO) of 400V. The device can handle a continuous collector current (IC) of up to 1A and a base current (IB) of up to 300mA. The total device dissipation (PD) is rated at 40W. The DC current gain (hFE) is specified to 200mA, with a minimum value of 30. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 5V at 500mA collector current and 50mA base current. The current gain-bandwidth product (fT) is typically 7MHz.
Thermal characteristics include an operating junction temperature (TJ) up to +150°C and a storage temperature range (Tstg) from –65°C to +150°C. The thermal resistance from junction to case (RthJC) is 3.12°C/W.
This transistor is designed for applications requiring high voltage switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (VCBO) for the NTE369 transistor is 800V.
The collector-emitter breakdown voltage (V(BR)CEO) of the NTE369 is 400V.
The maximum continuous collector current (IC) for the NTE369 is 1A.
The total device dissipation (PD) of the NTE369 transistor is 40W.
The DC current gain (hFE) of the NTE369 is a minimum of 30 at 200mA collector current and 10V collector-emitter voltage.
The operating junction temperature (TJ) for the NTE369 is up to +150°C.
The NTE369 transistor is supplied in a TO-66 package.