| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Voltage |
The NTE359 is an NPN RF BJT manufactured by NTE Electronics. This component is designed for applications requiring a 35V operating voltage and can handle a continuous collector current of 3A. It offers a power dissipation of 30000mW and comes in a 4-pin package.
The operating temperature range for the NTE359 is from -65°C to 200°C, making it suitable for a variety of environmental conditions. The material composition is silicon, ensuring reliable performance in RF applications.
This transistor is classified under Discretes and is actively in production. Its specifications make it a viable option for RF power amplifier and driver circuits where robust performance is essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 35V.
The operating temperature range is -65°C to 200°C.
The maximum power dissipation is 30W.
The continuous collector current rating is 3A.
The output power is 20W.
The NTE359 has 4 pins.