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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The NTE355 is a silicon NPN transistor engineered by NTE Electronics for 12.5 Volt VHF large-signal amplifier applications. It is suitable for military and industrial equipment operating up to 250MHz.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 18V and a continuous collector current (IC) of 4A. The device delivers a power output (PO) of 30W at 175MHz, with a minimum power gain (GPE) of 5.7dB and a minimum collector efficiency (η) of 60% under specified test conditions.
Designed for ruggedness and thermal performance, the NTE355 features balanced emitter construction with an isothermal resistor design. It utilizes a flange package for easy mounting and enhanced thermal conductivity to a heat sink. The low lead inductance in its stripline packaging facilitates easier design and increased broadband capabilities. Exceptional power output stability versus temperature is also a noted feature.
Absolute maximum ratings include a collector-base voltage (VCBO) of 36V and an emitter-base voltage (VEBO) of 4V. The total device dissipation (PD) is rated at 40W at 25°C, with a derating of 228mW/°C above that temperature. Storage temperature ranges from -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE355 is 18V.
The NTE355 has a continuous collector current rating of 4A.
The NTE355 provides a power output of 30W at 175MHz.
The minimum common-emitter amplifier power gain (GPE) for the NTE355 is 5.7dB.
The minimum collector efficiency (η) for the NTE355 is 60%.
The NTE355 utilizes a flange package for easy mounting and better thermal conductivity.
